Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• TFT devices comprise several functional layers and their respective contact interfaces. Generally, the individual layer fabrication process follows a number of thin film deposition and photolithographic patterning steps. During the film growth through plasma-enhanced chemical vapor deposition or

Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• . Keywords: charge carrier mobility; HOMO–LUMO energy levels; photophysical characterization; TFT devices; tris-(1-oxo-1H-phenalen-9-olate)aluminum(III); Introduction Since the field of organic electronics has emerged, interest in organic semiconductors (OSCs) has substantially increased [1]. The efficiency

• considerably lower, 0.014, and the lifetime (τ) is an order of magnitude longer, 7.1 ns. The lifetimes were calculated by the luminescence decays, in solution and in the thin film, as shown in Figure 4. Field effect mobility in TFT devices From the electrical characteristics measured in a field-effect

• ranging from 10 to 100 μm and with channel width/length (W/L) ratios of 20000/10, 20000/20, 10000/50, and 5000/100. From the electrical characterization of the TFT devices, the transfer curves, which yield the charge carrier mobility, were determined. As an example, in Figure 5, the transfer curve